PART |
Description |
Maker |
LA2231 LA2231M |
RDS Signal Demodulator RDS信号解调
|
Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
|
LC72720YV LC72720Y |
FMSS (DARC) and RDS Devices: RDS/RBDS single-chip signal processing Single-Chip RDS Signal-Processing System IC CMOS IC
|
Sanyo
|
TDA7331 4971 TDA7331D |
SINGLE CHIP RDS DEMODULATOR FILTER SINGLE CHIP RDS DEMODULATOR FILTER From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
BU1920 BU1920FS BU1920F |
Audio LSIs > High frequency signal processing > Decoder for RBDS (RDS) RDS / RBDS DECODER
|
ROHM[Rohm]
|
TDA7330BD TDA7330 TDA7330B |
SINGLE CHIP RDS DEMODULATOR FILTER SINGLE CHIP RDS DEMODULATOR FILTER
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω)) N-Channel N沟道
|
NXP Semiconductors N.V. TT electronics Semelab Limited Seme LAB
|
MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
|
Electronic Theatre Controls, Inc. SEME-LAB Seme LAB
|
STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|